2.5v drive nch mosfet 2SK3018UB ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low voltage drive(2.5v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 2SK3018UB ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 100 ma pulsed i dp ? 400 ma power dissipation p d 200 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 625 ? c / w * each terminal mounted on a recommended land. parameter type drain current parameter *2 *1 (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode * umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 abbreviated symbol : kn ?2 ?1 (3) (1) (2) 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
2SK3018UB ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 1 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =10 ? a, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 0.8 - 1.5 v v ds =3v, i d =100 ? a -58 i d =10ma, v gs = ? v - 7 13 i d =1ma, v gs =2.5v forward transfer admittance l y fs l20 - -msv ds =3v, i d =10ma input capacitance c iss - 13 - pf v ds =5v output capacitance c oss -9-pfv gs =0v reverse transfer capacitance c rss - 4 - pf f=1mhz turn-on delay time t d(on) - 15 - ns v dd 5v, i d =10ma rise time t r - 35 - ns v gs =5v turn-off delay time t d(off) - 80 - ns r l =500 ? fall time t f - 80 - ns r g =10 ? *pulsed conditions ? parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
2SK3018UB ? electrical characteristic curves 01 2 34 5 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs = 1.5v 4v 2v fig.1 typical output characteristics ta=25c pulsed 0 4 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125c 75c 25c ?25c v ds =3v pulsed fig.2 typical transfer characteristic s ? 50 0 0 1 1.5 2 gate threshold voltage : v gs(th) (v ) channel temperature : tch (c) 0.5 ? 25 25 50 75 100 125 15 0 v ds =3v i d =0.1ma pulsed fig.3 gate threshold voltage vs. channel temperature 0.001 1 2 50 static drain-source on-state resistance : r ds(on) () drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0 .5 5 10 20 ta=125c 75c 25c ?25c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0 .5 5 10 20 static drain-source on-state resistance : r ds(on) () v gs =2.5v pulsed drain current : i d (a) ta=125c 75c 25c ?25c fig.5 static drain-source on-state resistance vs. drain current (? ) 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0 .5 0.002 ta=?25c 25c 75c 125c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d =10ma static drain-source on-state resistance : r ds(on) () ta=25c pulsed i d =1ma fig.6 static drain-source on-state resistance vs. gate-source voltage ? 50 0 25 150 0 3 6 9 channel temperature : tch (c) ?25 50 75 100 125 2 1 4 5 7 8 v gs =4v pulsed i d =100ma i d =10ma static drain-source on-state resistance : r ds(on) () fig.7 static drain-source on-state resistance vs. channel temperature 200m source current : i s (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125c 75c 25c ?25c fig.9 reverse drain current vs. source-drain voltage () 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
2SK3018UB 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 5 0 5 10 20 c iss c oss c rss ta =25c f=1mh z v gs =0v fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 10 0 ta =25c v dd =5v v gs =5v r g =10 pulsed t d(off) t r t d(on) t f fig.12 switching characteristics 200m source current : i s (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage (?) 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
2SK3018UB ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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